于远方，男，理学博士，校长专聘副教授
办公地址：南京邮电大学仙林校区教5-214（3）
个人简介：
2020年博士毕业于东南大学（导师：倪振华教授），之后于东南大学量子材料与信息器件教育部重点实验室从事博士后研究工作（合作导师：吕俊鹏教授）。2023年加入南京邮电大学。主要从事新型低维半导体红外光电子器件研究，构筑了面向光通信波段和中红外大气窗口的系列高性能红外传感器。在Nature Communications，Advanced Materials 和 InfoMat 等国际期刊上发表论文 40 余篇，其中一作/通讯作者论文 24 篇。制定现行国家标准1项，申请专利 7 项。
主持国家自然科学基金、江苏省自然科学基金和中国博士后科学基金特别资助等科研项目，参与了多项国家重点研发计划研究。入选江苏省科技副总，江苏省对外科学技术促进会青年智库。获得全国半导体材料与电子元器件前沿论坛科学探索奖和博士研究生国家奖学金等。担任 eScience 和 Information & Functional Materials 期刊青年编委，任Advanced Materials、Advanced Functional Materials、Nano Letters、ACS Photonics、Science Bulletin、Nano-Micro Letters、Plasmonics、NANO 等期刊审稿人。
主要研究方向：
1. 二维材料
2. 红外探测器
3. 表面等离激元
4. 载流子动力学
主持项目：
1. 国家自然科学基金青年基金
2. 江苏省自然科学基金青年基金
3. 江苏省高等学校基础科学（自然科学）研究面上项目
4. 中国博士后科学基金特别资助
5. 中国博士后科学基金面上项目
6. 江苏省博士后科研资助计划
7. 东南大学博士后前沿科学基金
8. 有机电子与信息显示国家重点实验室主任基金
代表性成果（一作/通讯作者论文）：
1. Deciphering adverse detrapped hole transfer in hot-electron photoelectric conversion at infrared wavelengths, Advanced Materials, 2023, 35(12): 2210157. (SCI, IF 26.8)
2. Fast Photoelectric Conversion in the Near-Infrared Enabled by Plasmon-Induced Hot-Electron Transfer, Advanced Materials. 2019, 31(43): 1903829. (SCI, IF 26.8)
3.Hot-carrier Engineering for Two-dimensional Integrated Infrared Optoelectronics, InfoMat, 2024, 6(9): e12556. (SCI, IF 22.3)
4. Lead-free Single Crystal Metal Halide Perovskite Detectors, Materials Science & Engineering R-Reports, 2025,164: 100991. (SCI, IF 26.8)
5. Mechanistic insights into the hot electrons enhanced photocatalytic CO2 methanation over substoichiometric tungsten oxide, Chemical Engineering Journal, 2025, 524: 169804. (SCI, IF 13.2)
6. ReS2/MoSe2 Van der Waals Heterostructure Photodetectors for Polarization Imaging and Polarization-Encoded Optical Communication, Small, 2025,21(34): 2503599. (SCI, IF 12.1)
7. Dark Current Mechanisms and Suppression Strategies for Infrared Photodetectors Based on Two-dimensional Materials, Laser & Photonics Reviews, 2024, 18(5): 2300936. (SCI, IF 10)
8. On-Chip Metasurface-Mediated MoTe2 Photodetector with Electrically Tunable Polarization-Sensitivity, Advanced Optical Materials, 2025, 13(9): 2402668. (SCI, IF 7.2)
9. Mid-infrared plasmonic silicon quantum dot/HgCdTe Photodetector with Ultra-high Specific Detectivity, Science China-Information Sciences, 2023, 66(4): 142404. (SCI, IF 7.6)
10. Surface and Interface Engineering Empowered 2D van der Waals High-speed Photodetectors, Science China-Information Sciences, 2025, accepted. (SCI, IF 7.6)
11. Highly Sensitive Mid-Infrared Photodetector Enabled by Plasmonic Hot Carriers in the First Atmospheric Window, Chinese Physics Letters, 2022, 39(5): 058501. (SCI, IF 4.2) Highlighted Articles
12.Al-doped ZnO Plasmonic Metasurface Integrated Mercury Cadmium Telluride Mid-infrared Photodetector for Encrypted Optical Communication, Applied Surface Science, 2026, 720: 165225. (SCI, IF 6.9)
13. High-performance infrared photodetection beyond bandgap limitation based on surface plasmon resonance in sub-stoichiometry molybdenum oxide nanostructures, 2D Materials, 2023, 10(2): 025012. (SCI, IF 4.3)
14. High-sensitivity MoO3-x/Bi2O2Se Hybrid Photodetector Operating at Wavelengths of O-band and C-band, IEEE Electron Device Letters, 2024, 45(4): 613-616. (SCI, IF 4.5)
15. Polarization-sensitive Narrowband Infrared Photodetection Triggered by Optical Tamm State Engineering, Optics Express, 2023, 31(5): 8797. (SCI, IF 3.3)
16.Photodetecting and light-emitting devices based on two-dimensional materials, Chinese Physics B, 2017, 26(3): 036801. (SCI, IF 1.5) Topical Review
17.Investigation of multilayer domains in large-scale CVD monolayer graphene by optical imaging, Journal of Semiconductors, 2017, 38(3): 033003. (EI)
18.Photodetection based on Surface Plasmon-induced Hot Electrons, Laser & Optoelectronics Progress, 2019, 56(20): 202403. (ESCI, CSCD)
19. Bi2O2Se/Ta2NiSe5 Tunneling Heterojunction for High-Performance, Polarization-Sensitive, and Broadband Infrared Photodetector,Advanced Electronic Materials, 2025, 11(13), 2500115. (SCI, IF 5.3) Editor’s Choice
20. Achieving effective photoluminescence control in two-dimensional van der Waals transition metal dichalcogenide heterostructures via laser-modified ozone intercalation, Applied Physics Letters, 2025, 126(4): 043102. (SCI, IF 3.6)
21. High-performance WO3-x/Bi2O2Se Near-Infrared Photodetectors Based on Plasmon-induced Hot-Electron Injection, Applied Physics Letters, 2022, 121(6): 061103.(SCI, IF 3.6)
22. Fast and high-responsivity MoS2/MoSe2 heterostructure photodetectors enabled by van der Waals contact interfaces, Applied Physics Letters, 2024, 125(3): 033102. (SCI, IF 3.6)
23. Multispectral Photodetectors Based on 2D Material/Cs3Bi2I9 Heterostructures with High Detectivity, Nanotechnology, 2021, 32(41): 415202. (SCI, IF 2.8)
24. 授权专利：ZL 201710504771.8，授权公告日：2021 年 1 月 15 日，一种基于可降解生物传感器的心肌细胞生长状态监控系统，发明人：于远方，倪振华，梁铮，丁荣
25. 国家标准：GB/T 40071-2021，实施日期：2021 年 12 月 1 日，纳米技术-石墨烯相关二维材料的层数测量-光学对比度法，起草人：倪振华、梁铮、丁荣、谭平恒、王英英、安旭红、于远方、李倩、南海燕、吴幸、陈丽琼